Large scale production of indium antimonide film for position sensors in automobile engines
Identifieur interne : 000109 ( Main/Exploration ); précédent : 000108; suivant : 000110Large scale production of indium antimonide film for position sensors in automobile engines
Auteurs : RBID : ISTEX:11664_1995_Article_BF02676839.pdfEnglish descriptors
Abstract
We use low pressure MOVPE to grow indium antimonide films on groups of eight 3 inch GaAs wafers per run. The films are used for the production of magnetoresistive position sensors for the car industry. To meet the narrow specifications for automotive components, the standard deviation of the sheet resistivity, and the thickness of the films have been reduced below 1.5%. This uniformity is the result of an optimization process encompassing the determination of the best susceptor temperature and the optimum flow. The gas velocity was found to have a large impact on the uniformity of the layers. Rotation of the wafers and the use of an optimum gas velocity results in extremely uniform layers.
DOI: 10.1007/BF02676839
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The films are used for the production of magnetoresistive position sensors for the car industry. To meet the narrow specifications for automotive components, the standard deviation of the sheet resistivity, and the thickness of the films have been reduced below 1.5%. This uniformity is the result of an optimization process encompassing the determination of the best susceptor temperature and the optimum flow. The gas velocity was found to have a large impact on the uniformity of the layers. Rotation of the wafers and the use of an optimum gas velocity results in extremely uniform layers.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="d0792f8fa1c7615823e7fd2e80ac2230dddf9839"><titleInfo lang="eng"><title>Large scale production of indium antimonide film for position sensors in automobile engines</title></titleInfo><name type="personal"><namePart type="given">Egbert</namePart><namePart type="family">Woelk</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>AIXTRON GmbH, Kackertstr. 15-17, D-52072, Aachen, Germany</affiliation></name><name type="personal"><namePart type="given">Holger</namePart><namePart type="family">Jürgensen</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>AIXTRON GmbH, Kackertstr. 15-17, D-52072, Aachen, Germany</affiliation></name><name type="personal"><namePart type="given">Randy</namePart><namePart type="family">Rolph</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Microwave Products Division, Hughes Aircraft Company, 24120 Gamier Street, 90509-2940, Torrance, CA, </affiliation></name><name type="personal"><namePart type="given">Tim</namePart><namePart type="family">Zielinski</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Microwave Products Division, Hughes Aircraft Company, 24120 Gamier Street, 90509-2940, Torrance, CA, </affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, New York</publisher><dateCreated encoding="w3cdtf">1995-04-24</dateCreated><dateValid encoding="w3cdtf">2007-07-14</dateValid><copyrightDate encoding="w3cdtf">1995</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">We use low pressure MOVPE to grow indium antimonide films on groups of eight 3 inch GaAs wafers per run. The films are used for the production of magnetoresistive position sensors for the car industry. To meet the narrow specifications for automotive components, the standard deviation of the sheet resistivity, and the thickness of the films have been reduced below 1.5%. This uniformity is the result of an optimization process encompassing the determination of the best susceptor temperature and the optimum flow. The gas velocity was found to have a large impact on the uniformity of the layers. Rotation of the wafers and the use of an optimum gas velocity results in extremely uniform layers.</abstract><subject lang="eng"><genre>Key words</genre><topic>InSb</topic><topic>GaAs substrates</topic><topic>magnetoresistive sensors</topic><topic>metalorganic vapor phase epitaxy (MOVPE)</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>JEM</title></titleInfo><titleInfo><title>Journal of Electronic Materials</title><partNumber>Year: 1995</partNumber><partNumber>Volume: 24</partNumber><partNumber>Number: 11</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1995-11-01</dateIssued><copyrightDate encoding="w3cdtf">1995</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Optical and Electronic Materials</topic><topic>Characterization and Evaluation of Materials</topic><topic>Solid State Physics and Spectroscopy</topic><topic>Electronics and Microelectronics, Instrumentation</topic></subject><identifier type="issn">0361-5235</identifier><identifier type="issn">Electronic: 1543-186X</identifier><identifier type="matrixNumber">11664</identifier><identifier type="local">IssueArticleCount: 45</identifier><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1995</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02676839</identifier><identifier type="matrixNumber">Art37</identifier><identifier type="local">BF02676839</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>1715</start><end>1718</end></extent></part><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1995</recordOrigin><recordIdentifier>11664_1995_Article_BF02676839.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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